Operation of SiGe bipolar technology at cryogenic temperatures

J. D. Cressler

Open source

DOI: 10.1051/jp4:1994616
Published: 1994-06
Container: Le Journal de Physique IV
Publisher: EDP Sciences
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1051/jp4:1994616,
  title = {Operation of SiGe bipolar technology at cryogenic temperatures},
  author = {J. D. Cressler},
  year = {1994},
  journal = {Le Journal de Physique IV},
  doi = {10.1051/jp4:1994616},
  url = {https://doi.org/10.1051/jp4:1994616}
}

RIS

TY  - JOUR
TI  - Operation of SiGe bipolar technology at cryogenic temperatures
AU  - J. D. Cressler
PY  - 1994
JO  - Le Journal de Physique IV
DO  - 10.1051/jp4:1994616
UR  - https://doi.org/10.1051/jp4:1994616
ER  -

APA

Cressler, J. D. (1994). Operation of SiGe bipolar technology at cryogenic temperatures. Le Journal de Physique IV. https://doi.org/10.1051/jp4:1994616

Source records

crossref · retrieved 2026-09-25T16:22:59.537Z