PULSED ELECTRON BEAM ANNEALING OF ARSENIC-IMPLANTATION DAMAGE IN SILICON

D. Barbier, A. Laugier, A. Cachard

Open source

DOI: 10.1051/jphyscol:1982547
Published: 1982-12
Container: Le Journal de Physique Colloques
Publisher: EDP Sciences
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1051/jphyscol:1982547,
  title = {PULSED ELECTRON BEAM ANNEALING OF ARSENIC-IMPLANTATION DAMAGE IN SILICON},
  author = {D. Barbier and A. Laugier and A. Cachard},
  year = {1982},
  journal = {Le Journal de Physique Colloques},
  doi = {10.1051/jphyscol:1982547},
  url = {https://doi.org/10.1051/jphyscol:1982547}
}

RIS

TY  - JOUR
TI  - PULSED ELECTRON BEAM ANNEALING OF ARSENIC-IMPLANTATION DAMAGE IN SILICON
AU  - D. Barbier
AU  - A. Laugier
AU  - A. Cachard
PY  - 1982
JO  - Le Journal de Physique Colloques
DO  - 10.1051/jphyscol:1982547
UR  - https://doi.org/10.1051/jphyscol:1982547
ER  -

APA

Barbier, D., Laugier, A., & Cachard, A. (1982). PULSED ELECTRON BEAM ANNEALING OF ARSENIC-IMPLANTATION DAMAGE IN SILICON. Le Journal de Physique Colloques. https://doi.org/10.1051/jphyscol:1982547

Source records

crossref · retrieved 2026-09-26T04:09:48.580Z