MOS-DEGRADATION IN INPUT AND OUTPUT STAGES OF VLSI-CMOS-CIRCUITS DUE TO ELECTROSTATIC DISCHARGE

X. GUGGENMOS

Open source

DOI: 10.1051/jphyscol:1988463
Published: 1988-09
Container: Le Journal de Physique Colloques
Publisher: EDP Sciences
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1051/jphyscol:1988463,
  title = {MOS-DEGRADATION IN INPUT AND OUTPUT STAGES OF VLSI-CMOS-CIRCUITS DUE TO ELECTROSTATIC DISCHARGE},
  author = {X. GUGGENMOS},
  year = {1988},
  journal = {Le Journal de Physique Colloques},
  doi = {10.1051/jphyscol:1988463},
  url = {https://doi.org/10.1051/jphyscol:1988463}
}

RIS

TY  - JOUR
TI  - MOS-DEGRADATION IN INPUT AND OUTPUT STAGES OF VLSI-CMOS-CIRCUITS DUE TO ELECTROSTATIC DISCHARGE
AU  - X. GUGGENMOS
PY  - 1988
JO  - Le Journal de Physique Colloques
DO  - 10.1051/jphyscol:1988463
UR  - https://doi.org/10.1051/jphyscol:1988463
ER  -

APA

GUGGENMOS, X. (1988). MOS-DEGRADATION IN INPUT AND OUTPUT STAGES OF VLSI-CMOS-CIRCUITS DUE TO ELECTROSTATIC DISCHARGE. Le Journal de Physique Colloques. https://doi.org/10.1051/jphyscol:1988463

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crossref · retrieved 2026-11-08T06:31:53.039Z