Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics

A.-M. Dutron, E. Blanquet, V. Ghetta, R. Madar, C. Bernard

Open source

DOI
10.1051/jphyscol:19955135
Published
1995-06
Container
Le Journal de Physique IV
Publisher
EDP Sciences
Open access
unknown

Credibility signals

uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1051/jphyscol:19955135,
  title = {Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics},
  author = {A.-M. Dutron and E. Blanquet and V. Ghetta and R. Madar and C. Bernard},
  year = {1995},
  journal = {Le Journal de Physique IV},
  doi = {10.1051/jphyscol:19955135},
  url = {https://doi.org/10.1051/jphyscol:19955135}
}

RIS

TY  - JOUR
TI  - Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics
AU  - A.-M. Dutron
AU  - E. Blanquet
AU  - V. Ghetta
AU  - R. Madar
AU  - C. Bernard
PY  - 1995
JO  - Le Journal de Physique IV
DO  - 10.1051/jphyscol:19955135
UR  - https://doi.org/10.1051/jphyscol:19955135
ER  - 

APA

Dutron, A., Blanquet, E., Ghetta, V., Madar, R., & Bernard, C. (1995). Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics. Le Journal de Physique IV. https://doi.org/10.1051/jphyscol:19955135

Source records