Explanation of the large spin-dependent recombination effect in semiconductors

D. Kaplan, I. Solomon, N.F. Mott

Open source

DOI: 10.1051/jphyslet:0197800390405100
Published: 1978
Container: Journal de Physique Lettres
Publisher: EDP Sciences
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1051/jphyslet:0197800390405100,
  title = {Explanation of the large spin-dependent recombination effect in semiconductors},
  author = {D. Kaplan and I. Solomon and N.F. Mott},
  year = {1978},
  journal = {Journal de Physique Lettres},
  doi = {10.1051/jphyslet:0197800390405100},
  url = {https://doi.org/10.1051/jphyslet:0197800390405100}
}

RIS

TY  - JOUR
TI  - Explanation of the large spin-dependent recombination effect in semiconductors
AU  - D. Kaplan
AU  - I. Solomon
AU  - N.F. Mott
PY  - 1978
JO  - Journal de Physique Lettres
DO  - 10.1051/jphyslet:0197800390405100
UR  - https://doi.org/10.1051/jphyslet:0197800390405100
ER  -

APA

Kaplan, D., Solomon, I., & Mott, N. (1978). Explanation of the large spin-dependent recombination effect in semiconductors. Journal de Physique Lettres. https://doi.org/10.1051/jphyslet:0197800390405100

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crossref · retrieved 2026-11-06T12:18:03.126Z