ESR in the two phases of the magnetic semiconductor GaCr4S 8

P. Huguet, G. Alquié, M. Potel, M. Sergent

Open source

DOI: 10.1051/jphyslet:019830044010039300
Published: 1983
Container: Journal de Physique Lettres
Publisher: EDP Sciences
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1051/jphyslet:019830044010039300,
  title = {ESR in the two phases of the magnetic semiconductor GaCr4S 8},
  author = {P. Huguet and G. Alquié and M. Potel and M. Sergent},
  year = {1983},
  journal = {Journal de Physique Lettres},
  doi = {10.1051/jphyslet:019830044010039300},
  url = {https://doi.org/10.1051/jphyslet:019830044010039300}
}

RIS

TY  - JOUR
TI  - ESR in the two phases of the magnetic semiconductor GaCr4S 8
AU  - P. Huguet
AU  - G. Alquié
AU  - M. Potel
AU  - M. Sergent
PY  - 1983
JO  - Journal de Physique Lettres
DO  - 10.1051/jphyslet:019830044010039300
UR  - https://doi.org/10.1051/jphyslet:019830044010039300
ER  -

APA

Huguet, P., Alquié, G., Potel, M., & Sergent, M. (1983). ESR in the two phases of the magnetic semiconductor GaCr4S 8. Journal de Physique Lettres. https://doi.org/10.1051/jphyslet:019830044010039300

Source records

crossref · retrieved 2026-09-26T05:08:19.301Z