Minority carriers lifetime degradation during ion implanted silicon solar cell processing

M. Finetti, P. Ostoja, S. Solmi, G. Soncini

Open source

DOI: 10.1051/rphysap:019780013012080900
Published: 1978
Container: Revue de Physique Appliquée
Publisher: EDP Sciences
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1051/rphysap:019780013012080900,
  title = {Minority carriers lifetime degradation during ion implanted silicon solar cell processing},
  author = {M. Finetti and P. Ostoja and S. Solmi and G. Soncini},
  year = {1978},
  journal = {Revue de Physique Appliquée},
  doi = {10.1051/rphysap:019780013012080900},
  url = {https://doi.org/10.1051/rphysap:019780013012080900}
}

RIS

TY  - JOUR
TI  - Minority carriers lifetime degradation during ion implanted silicon solar cell processing
AU  - M. Finetti
AU  - P. Ostoja
AU  - S. Solmi
AU  - G. Soncini
PY  - 1978
JO  - Revue de Physique Appliquée
DO  - 10.1051/rphysap:019780013012080900
UR  - https://doi.org/10.1051/rphysap:019780013012080900
ER  -

APA

Finetti, M., Ostoja, P., Solmi, S., & Soncini, G. (1978). Minority carriers lifetime degradation during ion implanted silicon solar cell processing. Revue de Physique Appliquée. https://doi.org/10.1051/rphysap:019780013012080900

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crossref · retrieved 2026-09-26T01:51:48.243Z