Energy dependence of defect energy levels in electron irradiated silicon

J. Krynicki, J.C. Bourgoin, G. Vassal

Open source

DOI: 10.1051/rphysap:01979001403048100
Published: 1979
Container: Revue de Physique Appliquée
Publisher: EDP Sciences
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1051/rphysap:01979001403048100,
  title = {Energy dependence of defect energy levels in electron irradiated silicon},
  author = {J. Krynicki and J.C. Bourgoin and G. Vassal},
  year = {1979},
  journal = {Revue de Physique Appliquée},
  doi = {10.1051/rphysap:01979001403048100},
  url = {https://doi.org/10.1051/rphysap:01979001403048100}
}

RIS

TY  - JOUR
TI  - Energy dependence of defect energy levels in electron irradiated silicon
AU  - J. Krynicki
AU  - J.C. Bourgoin
AU  - G. Vassal
PY  - 1979
JO  - Revue de Physique Appliquée
DO  - 10.1051/rphysap:01979001403048100
UR  - https://doi.org/10.1051/rphysap:01979001403048100
ER  -

APA

Krynicki, J., Bourgoin, J., & Vassal, G. (1979). Energy dependence of defect energy levels in electron irradiated silicon. Revue de Physique Appliquée. https://doi.org/10.1051/rphysap:01979001403048100

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crossref · retrieved 2026-11-10T12:41:11.997Z