Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition
- DOI
- 10.1063/1.124576
- Published
- 1999-08-16
- Container
- Applied Physics Letters
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.124576,
title = {Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition},
author = {J. Thiesen and E. Iwaniczko and K. M. Jones and A. Mahan and R. Crandall},
year = {1999},
journal = {Applied Physics Letters},
doi = {10.1063/1.124576},
url = {https://doi.org/10.1063/1.124576}
}RIS
TY - JOUR TI - Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition AU - J. Thiesen AU - E. Iwaniczko AU - K. M. Jones AU - A. Mahan AU - R. Crandall PY - 1999 JO - Applied Physics Letters DO - 10.1063/1.124576 UR - https://doi.org/10.1063/1.124576 ER -
APA
Thiesen, J., Iwaniczko, E., Jones, K. M., Mahan, A., & Crandall, R. (1999). Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition. Applied Physics Letters. https://doi.org/10.1063/1.124576
Source records
- crossref · retrieved 2026-09-27T00:59:48.475Z