nBn structure based on InAs∕GaSb type-II strained layer superlattices

Jean-Baptiste Rodriguez, E. Plis, G. Bishop, Y. Sharma, H. Kim, L. Dawson, Sanjay Krishna

DOI: 10.1063/1.2760153
Published: 2007-07-23
Container: Applied Physics Letters
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1063/1.2760153,
  title = {nBn structure based on InAs∕GaSb type-II strained layer superlattices},
  author = {Jean-Baptiste Rodriguez and E. Plis and G. Bishop and Y. Sharma and H. Kim and L. Dawson and Sanjay Krishna},
  year = {2007},
  journal = {Applied Physics Letters},
  doi = {10.1063/1.2760153},
  url = {https://doi.org/10.1063/1.2760153}
}

RIS

TY  - JOUR
TI  - nBn structure based on InAs∕GaSb type-II strained layer superlattices
AU  - Jean-Baptiste Rodriguez
AU  - E. Plis
AU  - G. Bishop
AU  - Y. Sharma
AU  - H. Kim
AU  - L. Dawson
AU  - Sanjay Krishna
PY  - 2007
JO  - Applied Physics Letters
DO  - 10.1063/1.2760153
UR  - https://doi.org/10.1063/1.2760153
ER  -

APA

Rodriguez, J., Plis, E., Bishop, G., Sharma, Y., Kim, H., Dawson, L., & Krishna, S. (2007). nBn structure based on InAs∕GaSb type-II strained layer superlattices. Applied Physics Letters. https://doi.org/10.1063/1.2760153

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hal · retrieved 2026-11-10T09:48:03.716Z