High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode
- DOI
- 10.1063/1.3478010
- Published
- 2010-08-09
- Container
- Applied Physics Letters
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.3478010,
title = {High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode},
author = {Xiangyang Guo and Xiaohui Wang and Benkang Chang and Yijun Zhang and Pin Gao},
year = {2010},
journal = {Applied Physics Letters},
doi = {10.1063/1.3478010},
url = {https://doi.org/10.1063/1.3478010}
}RIS
TY - JOUR TI - High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode AU - Xiangyang Guo AU - Xiaohui Wang AU - Benkang Chang AU - Yijun Zhang AU - Pin Gao PY - 2010 JO - Applied Physics Letters DO - 10.1063/1.3478010 UR - https://doi.org/10.1063/1.3478010 ER -
APA
Guo, X., Wang, X., Chang, B., Zhang, Y., & Gao, P. (2010). High quantum efficiency of depth grade doping negative-electron-affinity GaN photocathode. Applied Physics Letters. https://doi.org/10.1063/1.3478010
Source records
- crossref · retrieved 2026-09-25T00:56:23.948Z