Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth
- DOI
- 10.1063/1.3571455
- Published
- 2011-03-21
- Container
- Applied Physics Letters
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.3571455,
title = {Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth},
author = {B. Lacroix and M. P. Chauvat and P. Ruterana and G. Nataf and P. de Mierry},
year = {2011},
journal = {Applied Physics Letters},
doi = {10.1063/1.3571455},
url = {https://doi.org/10.1063/1.3571455}
}RIS
TY - JOUR TI - Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth AU - B. Lacroix AU - M. P. Chauvat AU - P. Ruterana AU - G. Nataf AU - P. de Mierry PY - 2011 JO - Applied Physics Letters DO - 10.1063/1.3571455 UR - https://doi.org/10.1063/1.3571455 ER -
APA
Lacroix, B., Chauvat, M. P., Ruterana, P., Nataf, G., & Mierry, P. D. (2011). Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth. Applied Physics Letters. https://doi.org/10.1063/1.3571455
Source records
- crossref · retrieved 2026-09-27T10:41:47.774Z