1/f noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors
- DOI
- 10.1063/1.370630
- Published
- 1999-06-15
- Container
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.370630,
title = {1/f
noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors},
author = {U. H. Liaw and Y. K. Su},
year = {1999},
journal = {Journal of Applied Physics},
doi = {10.1063/1.370630},
url = {https://doi.org/10.1063/1.370630}
}RIS
TY - JOUR
TI - 1/f
noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors
AU - U. H. Liaw
AU - Y. K. Su
PY - 1999
JO - Journal of Applied Physics
DO - 10.1063/1.370630
UR - https://doi.org/10.1063/1.370630
ER - APA
Liaw, U. H., & Su, Y. K. (1999). 1/f noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics. https://doi.org/10.1063/1.370630
Source records
- crossref · retrieved 2026-09-24T19:49:52.449Z