Kinase detection with gallium nitride based high electron mobility transistors

Matthew S. Makowski, Isaac Bryan, Zlatko Sitar, Consuelo Arellano, Jinqiao Xie, Ramon Collazo, Albena Ivanisevic

Open source

DOI
10.1063/1.4812987
Published
2013-07-01
Container
Applied Physics Letters
Publisher
AIP Publishing
Open access
unknown

Credibility signals

uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1063/1.4812987,
  title = {Kinase detection with gallium nitride based high electron mobility transistors},
  author = {Matthew S. Makowski and Isaac Bryan and Zlatko Sitar and Consuelo Arellano and Jinqiao Xie and Ramon Collazo and Albena Ivanisevic},
  year = {2013},
  journal = {Applied Physics Letters},
  doi = {10.1063/1.4812987},
  url = {https://doi.org/10.1063/1.4812987}
}

RIS

TY  - JOUR
TI  - Kinase detection with gallium nitride based high electron mobility transistors
AU  - Matthew S. Makowski
AU  - Isaac Bryan
AU  - Zlatko Sitar
AU  - Consuelo Arellano
AU  - Jinqiao Xie
AU  - Ramon Collazo
AU  - Albena Ivanisevic
PY  - 2013
JO  - Applied Physics Letters
DO  - 10.1063/1.4812987
UR  - https://doi.org/10.1063/1.4812987
ER  - 

APA

Makowski, M. S., Bryan, I., Sitar, Z., Arellano, C., Xie, J., Collazo, R., & Ivanisevic, A. (2013). Kinase detection with gallium nitride based high electron mobility transistors. Applied Physics Letters. https://doi.org/10.1063/1.4812987

Source records