Kinase detection with gallium nitride based high electron mobility transistors
- DOI
- 10.1063/1.4812987
- Published
- 2013-07-01
- Container
- Applied Physics Letters
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.4812987,
title = {Kinase detection with gallium nitride based high electron mobility transistors},
author = {Matthew S. Makowski and Isaac Bryan and Zlatko Sitar and Consuelo Arellano and Jinqiao Xie and Ramon Collazo and Albena Ivanisevic},
year = {2013},
journal = {Applied Physics Letters},
doi = {10.1063/1.4812987},
url = {https://doi.org/10.1063/1.4812987}
}RIS
TY - JOUR TI - Kinase detection with gallium nitride based high electron mobility transistors AU - Matthew S. Makowski AU - Isaac Bryan AU - Zlatko Sitar AU - Consuelo Arellano AU - Jinqiao Xie AU - Ramon Collazo AU - Albena Ivanisevic PY - 2013 JO - Applied Physics Letters DO - 10.1063/1.4812987 UR - https://doi.org/10.1063/1.4812987 ER -
APA
Makowski, M. S., Bryan, I., Sitar, Z., Arellano, C., Xie, J., Collazo, R., & Ivanisevic, A. (2013). Kinase detection with gallium nitride based high electron mobility transistors. Applied Physics Letters. https://doi.org/10.1063/1.4812987
Source records
- crossref · retrieved 2026-09-25T03:42:07.840Z