Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. <b>103</b>, 013701 (2013)].

Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A.

Open source

DOI
10.1063/1.4819200
Published
2013-08-23
Container
Appl Phys Lett
Publisher
Not recorded
Open access
no

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BibTeX

@article{allodium:10.1063/1.4819200,
  title = {Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. <b>103</b>, 013701 (2013)].},
  author = {Makowski MS and  Bryan I and  Sitar Z and  Arellano C and  Xie J and  Collazo R and  Ivanisevic A.},
  year = {2013},
  journal = {Appl Phys Lett},
  doi = {10.1063/1.4819200},
  url = {https://doi.org/10.1063/1.4819200}
}

RIS

TY  - JOUR
TI  - Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. <b>103</b>, 013701 (2013)].
AU  - Makowski MS
AU  -  Bryan I
AU  -  Sitar Z
AU  -  Arellano C
AU  -  Xie J
AU  -  Collazo R
AU  -  Ivanisevic A.
PY  - 2013
JO  - Appl Phys Lett
DO  - 10.1063/1.4819200
UR  - https://doi.org/10.1063/1.4819200
ER  - 

APA

MS, M., I, B., Z, S., C, A., J, X., R, C., & A., I. (2013). Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. <b>103</b>, 013701 (2013)].. Appl Phys Lett. https://doi.org/10.1063/1.4819200

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