Two resistive switching regimes in thin film manganite memory devices on silicon
- DOI
- 10.1063/1.4826484
- Published
- 2013
- Container
- Applied Physics Letters
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1063/1.4826484,
title = {Two resistive switching regimes in thin film manganite memory devices on silicon},
author = {D. Rubi and F. Tesler and I. Alposta and A. Kalstein and N. Ghenzi and F. Gomez-Marlasca and M. Rozenberg and P. Levy},
year = {2013},
journal = {Applied Physics Letters},
doi = {10.1063/1.4826484},
url = {https://doi.org/10.1063/1.4826484}
}RIS
TY - JOUR TI - Two resistive switching regimes in thin film manganite memory devices on silicon AU - D. Rubi AU - F. Tesler AU - I. Alposta AU - A. Kalstein AU - N. Ghenzi AU - F. Gomez-Marlasca AU - M. Rozenberg AU - P. Levy PY - 2013 JO - Applied Physics Letters DO - 10.1063/1.4826484 UR - https://doi.org/10.1063/1.4826484 ER -
APA
Rubi, D., Tesler, F., Alposta, I., Kalstein, A., Ghenzi, N., Gomez-Marlasca, F., Rozenberg, M., & Levy, P. (2013). Two resistive switching regimes in thin film manganite memory devices on silicon. Applied Physics Letters. https://doi.org/10.1063/1.4826484
Source records
- hal · retrieved 2026-09-24T23:07:52.584Z