Atomistic full-band simulations of monolayer MoS<sub>2</sub> transistors
- DOI
- 10.1063/1.4837455
- Published
- 2013-11-25
- Container
- Applied Physics Letters
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.4837455,
title = {Atomistic full-band simulations of monolayer MoS<sub>2</sub> transistors},
author = {Jiwon Chang and Leonard F. Register and Sanjay K. Banerjee},
year = {2013},
journal = {Applied Physics Letters},
doi = {10.1063/1.4837455},
url = {https://doi.org/10.1063/1.4837455}
}RIS
TY - JOUR TI - Atomistic full-band simulations of monolayer MoS<sub>2</sub> transistors AU - Jiwon Chang AU - Leonard F. Register AU - Sanjay K. Banerjee PY - 2013 JO - Applied Physics Letters DO - 10.1063/1.4837455 UR - https://doi.org/10.1063/1.4837455 ER -
APA
Chang, J., Register, L. F., & Banerjee, S. K. (2013). Atomistic full-band simulations of monolayer MoS<sub>2</sub> transistors. Applied Physics Letters. https://doi.org/10.1063/1.4837455
Source records
- crossref · retrieved 2026-09-25T07:33:29.028Z