Microstructure and conductance-slope of InAs/GaSb tunnel diodes

Ryan M. Iutzi, Eugene A. Fitzgerald

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DOI: 10.1063/1.4883756
Published: 2014-06-17
Container: Journal of Applied Physics
Publisher: AIP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1063/1.4883756,
  title = {Microstructure and conductance-slope of InAs/GaSb tunnel diodes},
  author = {Ryan M. Iutzi and Eugene A. Fitzgerald},
  year = {2014},
  journal = {Journal of Applied Physics},
  doi = {10.1063/1.4883756},
  url = {https://doi.org/10.1063/1.4883756}
}

RIS

TY  - JOUR
TI  - Microstructure and conductance-slope of InAs/GaSb tunnel diodes
AU  - Ryan M. Iutzi
AU  - Eugene A. Fitzgerald
PY  - 2014
JO  - Journal of Applied Physics
DO  - 10.1063/1.4883756
UR  - https://doi.org/10.1063/1.4883756
ER  -

APA

Iutzi, R. M., & Fitzgerald, E. A. (2014). Microstructure and conductance-slope of InAs/GaSb tunnel diodes. Journal of Applied Physics. https://doi.org/10.1063/1.4883756

Source records

crossref · retrieved 2026-09-25T08:25:14.967Z