Laser doping for ohmic contacts in n-type Ge

F. Chiodi, A. D. Chepelianskii, C. Gardès, G. Hallais, D. Bouchier, D. Débarre

Open source

DOI
10.1063/1.4904416
Published
2014-12-15
Container
Applied Physics Letters
Publisher
AIP Publishing
Open access
unknown

Credibility signals

uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1063/1.4904416,
  title = {Laser doping for ohmic contacts in n-type Ge},
  author = {F. Chiodi and A. D. Chepelianskii and C. Gardès and G. Hallais and D. Bouchier and D. Débarre},
  year = {2014},
  journal = {Applied Physics Letters},
  doi = {10.1063/1.4904416},
  url = {https://doi.org/10.1063/1.4904416}
}

RIS

TY  - JOUR
TI  - Laser doping for ohmic contacts in n-type Ge
AU  - F. Chiodi
AU  - A. D. Chepelianskii
AU  - C. Gardès
AU  - G. Hallais
AU  - D. Bouchier
AU  - D. Débarre
PY  - 2014
JO  - Applied Physics Letters
DO  - 10.1063/1.4904416
UR  - https://doi.org/10.1063/1.4904416
ER  - 

APA

Chiodi, F., Chepelianskii, A. D., Gardès, C., Hallais, G., Bouchier, D., & Débarre, D. (2014). Laser doping for ohmic contacts in n-type Ge. Applied Physics Letters. https://doi.org/10.1063/1.4904416

Source records