Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering
- DOI
- 10.1063/1.4929772
- Published
- 2015-08-01
- Container
- AIP Advances
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.4929772,
title = {Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering},
author = {H. J. Harsan Ma and S. W. Zeng and A. Annadi and Z. Huang and T. Venkatesan and Ariando},
year = {2015},
journal = {AIP Advances},
doi = {10.1063/1.4929772},
url = {https://doi.org/10.1063/1.4929772}
}RIS
TY - JOUR TI - Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering AU - H. J. Harsan Ma AU - S. W. Zeng AU - A. Annadi AU - Z. Huang AU - T. Venkatesan AU - Ariando PY - 2015 JO - AIP Advances DO - 10.1063/1.4929772 UR - https://doi.org/10.1063/1.4929772 ER -
APA
Ma, H. J. H., Zeng, S. W., Annadi, A., Huang, Z., Venkatesan, T., & Ariando (2015). Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering. AIP Advances. https://doi.org/10.1063/1.4929772
Source records
- crossref · retrieved 2026-11-10T07:00:33.545Z