Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface

R. Kotipalli, B. Vermang, J. Joel, R. Rajkumar, M. Edoff, D. Flandre

Open source

DOI: 10.1063/1.4932512
Published: 2015-10-01
Container: AIP Advances
Publisher: AIP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1063/1.4932512,
  title = {Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface},
  author = {R. Kotipalli and B. Vermang and J. Joel and R. Rajkumar and M. Edoff and D. Flandre},
  year = {2015},
  journal = {AIP Advances},
  doi = {10.1063/1.4932512},
  url = {https://doi.org/10.1063/1.4932512}
}

RIS

TY  - JOUR
TI  - Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface
AU  - R. Kotipalli
AU  - B. Vermang
AU  - J. Joel
AU  - R. Rajkumar
AU  - M. Edoff
AU  - D. Flandre
PY  - 2015
JO  - AIP Advances
DO  - 10.1063/1.4932512
UR  - https://doi.org/10.1063/1.4932512
ER  -

APA

Kotipalli, R., Vermang, B., Joel, J., Rajkumar, R., Edoff, M., & Flandre, D. (2015). Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface. AIP Advances. https://doi.org/10.1063/1.4932512

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crossref · retrieved 2026-11-04T10:05:29.021Z