Dislocation core structures in Si-doped GaN
- DOI
- 10.1063/1.4937457
- Published
- 2015-12-14
- Container
- Applied Physics Letters
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.4937457,
title = {Dislocation core structures in Si-doped GaN},
author = {S. L. Rhode and M. K. Horton and W. Y. Fu and S.-L. Sahonta and M. J. Kappers and T. J. Pennycook and C. J. Humphreys and R. O. Dusane and M. A. Moram},
year = {2015},
journal = {Applied Physics Letters},
doi = {10.1063/1.4937457},
url = {https://doi.org/10.1063/1.4937457}
}RIS
TY - JOUR TI - Dislocation core structures in Si-doped GaN AU - S. L. Rhode AU - M. K. Horton AU - W. Y. Fu AU - S.-L. Sahonta AU - M. J. Kappers AU - T. J. Pennycook AU - C. J. Humphreys AU - R. O. Dusane AU - M. A. Moram PY - 2015 JO - Applied Physics Letters DO - 10.1063/1.4937457 UR - https://doi.org/10.1063/1.4937457 ER -
APA
Rhode, S. L., Horton, M. K., Fu, W. Y., Sahonta, S., Kappers, M. J., Pennycook, T. J., Humphreys, C. J., Dusane, R. O., & Moram, M. A. (2015). Dislocation core structures in Si-doped GaN. Applied Physics Letters. https://doi.org/10.1063/1.4937457
Source records
- crossref · retrieved 2026-09-24T22:15:06.764Z