Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance
- DOI
- 10.1063/1.4943786
- Published
- 2016-03-07
- Container
- Applied Physics Letters
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.4943786,
title = {Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance},
author = {Jae Hyo Park and Seung Ki Joo},
year = {2016},
journal = {Applied Physics Letters},
doi = {10.1063/1.4943786},
url = {https://doi.org/10.1063/1.4943786}
}RIS
TY - JOUR TI - Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance AU - Jae Hyo Park AU - Seung Ki Joo PY - 2016 JO - Applied Physics Letters DO - 10.1063/1.4943786 UR - https://doi.org/10.1063/1.4943786 ER -
APA
Park, J. H., & Joo, S. K. (2016). Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance. Applied Physics Letters. https://doi.org/10.1063/1.4943786
Source records
- crossref · retrieved 2026-09-25T00:29:09.466Z