Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance

Jae Hyo Park, Seung Ki Joo

Open source

DOI
10.1063/1.4943786
Published
2016-03-07
Container
Applied Physics Letters
Publisher
AIP Publishing
Open access
unknown

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BibTeX

@article{allodium:10.1063/1.4943786,
  title = {Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance},
  author = {Jae Hyo Park and Seung Ki Joo},
  year = {2016},
  journal = {Applied Physics Letters},
  doi = {10.1063/1.4943786},
  url = {https://doi.org/10.1063/1.4943786}
}

RIS

TY  - JOUR
TI  - Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance
AU  - Jae Hyo Park
AU  - Seung Ki Joo
PY  - 2016
JO  - Applied Physics Letters
DO  - 10.1063/1.4943786
UR  - https://doi.org/10.1063/1.4943786
ER  - 

APA

Park, J. H., & Joo, S. K. (2016). Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance. Applied Physics Letters. https://doi.org/10.1063/1.4943786

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