Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

David Hutchinson, Jay Mathews, Joseph T. Sullivan, Austin Akey, Michael J. Aziz, Tonio Buonassisi, Peter Persans, Jeffrey M. Warrender

Open source

DOI
10.1063/1.4948986
Published
5
Container
AIP Advances
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1063/1.4948986,
  title = {Effect of layer thickness on device response of silicon heavily supersaturated with sulfur},
  author = {David Hutchinson and Jay Mathews and Joseph T. Sullivan and Austin Akey and Michael J. Aziz and Tonio Buonassisi and Peter Persans and Jeffrey M. Warrender},
  year = {2016},
  journal = {AIP Advances},
  doi = {10.1063/1.4948986},
  url = {https://doi.org/10.1063/1.4948986}
}

RIS

TY  - JOUR
TI  - Effect of layer thickness on device response of silicon heavily supersaturated with sulfur
AU  - David Hutchinson
AU  - Jay Mathews
AU  - Joseph T. Sullivan
AU  - Austin Akey
AU  - Michael J. Aziz
AU  - Tonio Buonassisi
AU  - Peter Persans
AU  - Jeffrey M. Warrender
PY  - 2016
JO  - AIP Advances
DO  - 10.1063/1.4948986
UR  - https://doi.org/10.1063/1.4948986
ER  - 

APA

Hutchinson, D., Mathews, J., Sullivan, J. T., Akey, A., Aziz, M. J., Buonassisi, T., Persans, P., & Warrender, J. M. (2016). Effect of layer thickness on device response of silicon heavily supersaturated with sulfur. AIP Advances. https://doi.org/10.1063/1.4948986

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