Effect of layer thickness on device response of silicon heavily supersaturated with sulfur
- DOI
- 10.1063/1.4948986
- Published
- 5
- Container
- AIP Advances
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1063/1.4948986,
title = {Effect of layer thickness on device response of silicon heavily supersaturated with sulfur},
author = {David Hutchinson and Jay Mathews and Joseph T. Sullivan and Austin Akey and Michael J. Aziz and Tonio Buonassisi and Peter Persans and Jeffrey M. Warrender},
year = {2016},
journal = {AIP Advances},
doi = {10.1063/1.4948986},
url = {https://doi.org/10.1063/1.4948986}
}RIS
TY - JOUR TI - Effect of layer thickness on device response of silicon heavily supersaturated with sulfur AU - David Hutchinson AU - Jay Mathews AU - Joseph T. Sullivan AU - Austin Akey AU - Michael J. Aziz AU - Tonio Buonassisi AU - Peter Persans AU - Jeffrey M. Warrender PY - 2016 JO - AIP Advances DO - 10.1063/1.4948986 UR - https://doi.org/10.1063/1.4948986 ER -
APA
Hutchinson, D., Mathews, J., Sullivan, J. T., Akey, A., Aziz, M. J., Buonassisi, T., Persans, P., & Warrender, J. M. (2016). Effect of layer thickness on device response of silicon heavily supersaturated with sulfur. AIP Advances. https://doi.org/10.1063/1.4948986
Source records
- doaj · retrieved 2026-09-25T08:27:02.720Z