Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors
- DOI
- 10.1063/1.4974080
- Published
- 2017-01-09
- Container
- Applied Physics Letters
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.4974080,
title = {Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors},
author = {Wei-Hsiang Wang and Syue-Ru Lyu and Elica Heredia and Shu-Hao Liu and Pei-hsun Jiang and Po-Yung Liao and Ting-Chang Chang and Hua-Mao Chen},
year = {2017},
journal = {Applied Physics Letters},
doi = {10.1063/1.4974080},
url = {https://doi.org/10.1063/1.4974080}
}RIS
TY - JOUR TI - Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors AU - Wei-Hsiang Wang AU - Syue-Ru Lyu AU - Elica Heredia AU - Shu-Hao Liu AU - Pei-hsun Jiang AU - Po-Yung Liao AU - Ting-Chang Chang AU - Hua-Mao Chen PY - 2017 JO - Applied Physics Letters DO - 10.1063/1.4974080 UR - https://doi.org/10.1063/1.4974080 ER -
APA
Wang, W., Lyu, S., Heredia, E., Liu, S., Jiang, P., Liao, P., Chang, T., & Chen, H. (2017). Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors. Applied Physics Letters. https://doi.org/10.1063/1.4974080
Source records
- crossref · retrieved 2026-11-10T14:38:52.420Z