Growth, structural, and electrical properties of germanium-<i>on</i>-silicon heterostructure by molecular beam epitaxy
- DOI
- 10.1063/1.4993446
- Published
- 2017-09-01
- Container
- AIP Advances
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/1.4993446,
title = {Growth, structural, and electrical properties of germanium-<i>on</i>-silicon heterostructure by molecular beam epitaxy},
author = {Aheli Ghosh and Michael B. Clavel and Peter D. Nguyen and Michael A. Meeker and Giti A. Khodaparast and Robert J. Bodnar and Mantu K. Hudait},
year = {2017},
journal = {AIP Advances},
doi = {10.1063/1.4993446},
url = {https://doi.org/10.1063/1.4993446}
}RIS
TY - JOUR TI - Growth, structural, and electrical properties of germanium-<i>on</i>-silicon heterostructure by molecular beam epitaxy AU - Aheli Ghosh AU - Michael B. Clavel AU - Peter D. Nguyen AU - Michael A. Meeker AU - Giti A. Khodaparast AU - Robert J. Bodnar AU - Mantu K. Hudait PY - 2017 JO - AIP Advances DO - 10.1063/1.4993446 UR - https://doi.org/10.1063/1.4993446 ER -
APA
Ghosh, A., Clavel, M. B., Nguyen, P. D., Meeker, M. A., Khodaparast, G. A., Bodnar, R. J., & Hudait, M. K. (2017). Growth, structural, and electrical properties of germanium-<i>on</i>-silicon heterostructure by molecular beam epitaxy. AIP Advances. https://doi.org/10.1063/1.4993446
Source records
- crossref · retrieved 2026-11-05T11:11:55.586Z