Investigation of <i>in-situ</i> co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy

M. A. Zrir, B. Alek, A. Hussein, S. A. Shaker

DOI: 10.1063/1.5009327
Published: 2018-04-04
Container: Journal of Applied Physics
Publisher: AIP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1063/1.5009327,
  title = {Investigation of
                    <i>in-situ</i>
                    co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy},
  author = {M. A. Zrir and B. Alek and A. Hussein and S. A. Shaker},
  year = {2018},
  journal = {Journal of Applied Physics},
  doi = {10.1063/1.5009327},
  url = {https://doi.org/10.1063/1.5009327}
}

RIS

TY  - JOUR
TI  - Investigation of
                    <i>in-situ</i>
                    co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy
AU  - M. A. Zrir
AU  - B. Alek
AU  - A. Hussein
AU  - S. A. Shaker
PY  - 2018
JO  - Journal of Applied Physics
DO  - 10.1063/1.5009327
UR  - https://doi.org/10.1063/1.5009327
ER  -

APA

Zrir, M. A., Alek, B., Hussein, A., & Shaker, S. A. (2018). Investigation of <i>in-situ</i> co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy. Journal of Applied Physics. https://doi.org/10.1063/1.5009327

Source records

crossref · retrieved 2026-09-25T03:44:57.876Z