Quasi-steady-state photoconductance bulk lifetime measurements on silicon ingots with deeper photogeneration

Mohsen Goodarzi, Ronald Sinton, Daniel Macdonald

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DOI: 10.1063/1.5086378
Published: 1
Container: AIP Advances
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1063/1.5086378,
  title = {Quasi-steady-state photoconductance bulk lifetime measurements on silicon ingots with deeper photogeneration},
  author = {Mohsen Goodarzi and Ronald Sinton and Daniel Macdonald},
  year = {2019},
  journal = {AIP Advances},
  doi = {10.1063/1.5086378},
  url = {https://doi.org/10.1063/1.5086378}
}

RIS

TY  - JOUR
TI  - Quasi-steady-state photoconductance bulk lifetime measurements on silicon ingots with deeper photogeneration
AU  - Mohsen Goodarzi
AU  - Ronald Sinton
AU  - Daniel Macdonald
PY  - 2019
JO  - AIP Advances
DO  - 10.1063/1.5086378
UR  - https://doi.org/10.1063/1.5086378
ER  -

APA

Goodarzi, M., Sinton, R., & Macdonald, D. (2019). Quasi-steady-state photoconductance bulk lifetime measurements on silicon ingots with deeper photogeneration. AIP Advances. https://doi.org/10.1063/1.5086378

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doaj · retrieved 2026-09-25T02:08:26.658Z