Tuning the resistive switching in tantalum oxide-based memristors by annealing
- DOI
- 10.1063/5.0004722
- Published
- 2020-06-01
- Container
- AIP Advances
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/5.0004722,
title = {Tuning the resistive switching in tantalum oxide-based memristors by annealing},
author = {Yang Li and Y. Eren Suyolcu and Simone Sanna and Dennis Valbjørn Christensen and Marie Lund Traulsen and Eugen Stamate and Christian Søndergaard Pedersen and Peter A. van Aken and Juan Maria García Lastra and Vincenzo Esposito and Nini Pryds},
year = {2020},
journal = {AIP Advances},
doi = {10.1063/5.0004722},
url = {https://doi.org/10.1063/5.0004722}
}RIS
TY - JOUR TI - Tuning the resistive switching in tantalum oxide-based memristors by annealing AU - Yang Li AU - Y. Eren Suyolcu AU - Simone Sanna AU - Dennis Valbjørn Christensen AU - Marie Lund Traulsen AU - Eugen Stamate AU - Christian Søndergaard Pedersen AU - Peter A. van Aken AU - Juan Maria García Lastra AU - Vincenzo Esposito AU - Nini Pryds PY - 2020 JO - AIP Advances DO - 10.1063/5.0004722 UR - https://doi.org/10.1063/5.0004722 ER -
APA
Li, Y., Suyolcu, Y. E., Sanna, S., Christensen, D. V., Traulsen, M. L., Stamate, E., Pedersen, C. S., Aken, P. A. V., Lastra, J. M. G., Esposito, V., & Pryds, N. (2020). Tuning the resistive switching in tantalum oxide-based memristors by annealing. AIP Advances. https://doi.org/10.1063/5.0004722
Source records
- crossref · retrieved 2026-09-25T07:34:20.407Z