Controlling the relaxation mechanism of low strain Si1−<i>x</i>Ge<i>x</i>/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source
- DOI
- 10.1063/5.0032454
- Published
- 2020-12-04
- Container
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/5.0032454,
title = {Controlling the relaxation mechanism of low strain Si1−<i>x</i>Ge<i>x</i>/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source},
author = {L. Becker and P. Storck and T. Schulz and M. H. Zoellner and L. Di Gaspare and F. Rovaris and A. Marzegalli and F. Montalenti and M. De Seta and G. Capellini and G. Schwalb and T. Schroeder and M. Albrecht},
year = {2020},
journal = {Journal of Applied Physics},
doi = {10.1063/5.0032454},
url = {https://doi.org/10.1063/5.0032454}
}RIS
TY - JOUR TI - Controlling the relaxation mechanism of low strain Si1−<i>x</i>Ge<i>x</i>/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source AU - L. Becker AU - P. Storck AU - T. Schulz AU - M. H. Zoellner AU - L. Di Gaspare AU - F. Rovaris AU - A. Marzegalli AU - F. Montalenti AU - M. De Seta AU - G. Capellini AU - G. Schwalb AU - T. Schroeder AU - M. Albrecht PY - 2020 JO - Journal of Applied Physics DO - 10.1063/5.0032454 UR - https://doi.org/10.1063/5.0032454 ER -
APA
Becker, L., Storck, P., Schulz, T., Zoellner, M. H., Gaspare, L. D., Rovaris, F., Marzegalli, A., Montalenti, F., Seta, M. D., Capellini, G., Schwalb, G., Schroeder, T., & Albrecht, M. (2020). Controlling the relaxation mechanism of low strain Si1−<i>x</i>Ge<i>x</i>/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source. Journal of Applied Physics. https://doi.org/10.1063/5.0032454
Source records
- crossref · retrieved 2026-11-10T07:12:48.057Z