Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
- DOI
- 10.1063/5.0041525
- Published
- 9
- Container
- AIP Advances
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1063/5.0041525,
title = {Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures},
author = {Cameron J. Kopas and Justin Gonzales and Shengke Zhang and D. R. Queen and Brian Wagner and McDonald Robinson and James Huffman and Nathan Newman},
year = {2021},
journal = {AIP Advances},
doi = {10.1063/5.0041525},
url = {https://doi.org/10.1063/5.0041525}
}RIS
TY - JOUR TI - Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures AU - Cameron J. Kopas AU - Justin Gonzales AU - Shengke Zhang AU - D. R. Queen AU - Brian Wagner AU - McDonald Robinson AU - James Huffman AU - Nathan Newman PY - 2021 JO - AIP Advances DO - 10.1063/5.0041525 UR - https://doi.org/10.1063/5.0041525 ER -
APA
Kopas, C. J., Gonzales, J., Zhang, S., Queen, D. R., Wagner, B., Robinson, M., Huffman, J., & Newman, N. (2021). Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures. AIP Advances. https://doi.org/10.1063/5.0041525
Source records
- doaj · retrieved 2026-09-27T03:06:52.215Z