3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio

Xinyue Yu, Zhongyuan Ma, Kangmin Leng, Tong Chen, Wei Li, Kunji Chen, Jun Xu, Ling Xu

Open source

DOI: 10.1063/5.0100234
Published: 2022-10-01
Container: AIP Advances
Publisher: AIP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1063/5.0100234,
  title = {3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio},
  author = {Xinyue Yu and Zhongyuan Ma and Kangmin Leng and Tong Chen and Wei Li and Kunji Chen and Jun Xu and Ling Xu},
  year = {2022},
  journal = {AIP Advances},
  doi = {10.1063/5.0100234},
  url = {https://doi.org/10.1063/5.0100234}
}

RIS

TY  - JOUR
TI  - 3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio
AU  - Xinyue Yu
AU  - Zhongyuan Ma
AU  - Kangmin Leng
AU  - Tong Chen
AU  - Wei Li
AU  - Kunji Chen
AU  - Jun Xu
AU  - Ling Xu
PY  - 2022
JO  - AIP Advances
DO  - 10.1063/5.0100234
UR  - https://doi.org/10.1063/5.0100234
ER  -

APA

Yu, X., Ma, Z., Leng, K., Chen, T., Li, W., Chen, K., Xu, J., & Xu, L. (2022). 3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio. AIP Advances. https://doi.org/10.1063/5.0100234

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crossref · retrieved 2026-09-25T02:06:10.442Z