Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer

Xiao Wang, Zhi-Yu Lin, Yu-Min Zhang, Jian-Feng Wang, Ke Xu

Open source

DOI: 10.1063/5.0153570
Published: 9
Container: AIP Advances
Publisher: Not recorded
Open access: yes

Credibility signals

uncertain Score 53/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

cautionDOI registered: No matching Crossref record was present in this response. Source: Crossref; license: CC0 metadata
cautionDOI resolves: No matching Crossref record was present in this response. Source: Crossref; license: CC0 metadata
supportingDirectory of Open Access Journals: A matching record was returned by DOAJ. Source: DOAJ; license: CC0
not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredROR affiliation: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
supportingOpen access status: Normalized open-access status: open. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
not scoredPublication license: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredPublication version: A publication version was supplied but is not scored. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
cautionMetadata completeness: 5 of 6 scored descriptive metadata groups are present; missing fields increase uncertainty. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer

Cite this work

BibTeX

@article{allodium:10.1063/5.0153570,
  title = {Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer},
  author = {Xiao Wang and Zhi-Yu Lin and Yu-Min Zhang and Jian-Feng Wang and Ke Xu},
  year = {2023},
  journal = {AIP Advances},
  doi = {10.1063/5.0153570},
  url = {https://doi.org/10.1063/5.0153570}
}

RIS

TY  - JOUR
TI  - Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer
AU  - Xiao Wang
AU  - Zhi-Yu Lin
AU  - Yu-Min Zhang
AU  - Jian-Feng Wang
AU  - Ke Xu
PY  - 2023
JO  - AIP Advances
DO  - 10.1063/5.0153570
UR  - https://doi.org/10.1063/5.0153570
ER  -

APA

Wang, X., Lin, Z., Zhang, Y., Wang, J., & Xu, K. (2023). Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer. AIP Advances. https://doi.org/10.1063/5.0153570

Source records

doaj · retrieved 2026-09-26T11:14:33.280Z