Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.
- DOI
- 10.1063/5.0164172
- Published
- 2023 Oct 1
- Container
- The Review of scientific instruments
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/5.0164172,
title = {Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.},
author = {Schwinge C and Hoffmann R and Hertel J and Wislicenus M and Gerlich L and Völklein F and Gerlach G and Wagner-Reetz M},
year = {2023},
journal = {The Review of scientific instruments},
doi = {10.1063/5.0164172},
url = {https://doi.org/10.1063/5.0164172}
}RIS
TY - JOUR TI - Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films. AU - Schwinge C AU - Hoffmann R AU - Hertel J AU - Wislicenus M AU - Gerlich L AU - Völklein F AU - Gerlach G AU - Wagner-Reetz M PY - 2023 JO - The Review of scientific instruments DO - 10.1063/5.0164172 UR - https://doi.org/10.1063/5.0164172 ER -
APA
C, S., R, H., J, H., M, W., L, G., F, V., G, G., & M, W. (2023). Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.. The Review of scientific instruments. https://doi.org/10.1063/5.0164172
Source records
- pubmed · retrieved 2026-09-26T18:12:13.208Z