Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.

Schwinge C, Hoffmann R, Hertel J, Wislicenus M, Gerlich L, Völklein F, Gerlach G, Wagner-Reetz M

Open source

DOI
10.1063/5.0164172
Published
2023 Oct 1
Container
The Review of scientific instruments
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1063/5.0164172,
  title = {Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.},
  author = {Schwinge C and Hoffmann R and Hertel J and Wislicenus M and Gerlich L and Völklein F and Gerlach G and Wagner-Reetz M},
  year = {2023},
  journal = {The Review of scientific instruments},
  doi = {10.1063/5.0164172},
  url = {https://doi.org/10.1063/5.0164172}
}

RIS

TY  - JOUR
TI  - Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.
AU  - Schwinge C
AU  - Hoffmann R
AU  - Hertel J
AU  - Wislicenus M
AU  - Gerlich L
AU  - Völklein F
AU  - Gerlach G
AU  - Wagner-Reetz M
PY  - 2023
JO  - The Review of scientific instruments
DO  - 10.1063/5.0164172
UR  - https://doi.org/10.1063/5.0164172
ER  - 

APA

C, S., R, H., J, H., M, W., L, G., F, V., G, G., & M, W. (2023). Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.. The Review of scientific instruments. https://doi.org/10.1063/5.0164172

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