Tri-gate junctionless transistors with electrostatically highly doped channel
- DOI
- 10.1063/5.0174553
- Published
- 11
- Container
- AIP Advances
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1063/5.0174553,
title = {Tri-gate junctionless transistors with electrostatically highly doped channel},
author = {Dae-Young Jeon},
year = {2023},
journal = {AIP Advances},
doi = {10.1063/5.0174553},
url = {https://doi.org/10.1063/5.0174553}
}RIS
TY - JOUR TI - Tri-gate junctionless transistors with electrostatically highly doped channel AU - Dae-Young Jeon PY - 2023 JO - AIP Advances DO - 10.1063/5.0174553 UR - https://doi.org/10.1063/5.0174553 ER -
APA
Jeon, D. (2023). Tri-gate junctionless transistors with electrostatically highly doped channel. AIP Advances. https://doi.org/10.1063/5.0174553
Source records
- doaj · retrieved 2026-11-10T06:09:42.135Z