Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application

Takanori Takahashi, Mutsunori Uenuma, Masaharu Kobayashi, Yukiharu Uraoka

Open source

DOI: 10.1063/5.0243670
Published: 2025-05-01
Container: APL Materials
Publisher: AIP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1063/5.0243670,
  title = {Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application},
  author = {Takanori Takahashi and Mutsunori Uenuma and Masaharu Kobayashi and Yukiharu Uraoka},
  year = {2025},
  journal = {APL Materials},
  doi = {10.1063/5.0243670},
  url = {https://doi.org/10.1063/5.0243670}
}

RIS

TY  - JOUR
TI  - Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application
AU  - Takanori Takahashi
AU  - Mutsunori Uenuma
AU  - Masaharu Kobayashi
AU  - Yukiharu Uraoka
PY  - 2025
JO  - APL Materials
DO  - 10.1063/5.0243670
UR  - https://doi.org/10.1063/5.0243670
ER  -

APA

Takahashi, T., Uenuma, M., Kobayashi, M., & Uraoka, Y. (2025). Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application. APL Materials. https://doi.org/10.1063/5.0243670

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crossref · retrieved 2026-11-10T14:30:20.912Z