Chemical transport-based growth of Si and SiGe nanowires

Ke Yang, Xianjun Zhu, Ruiling Gong, Ileana Florea, Pere Roca i Cabarrocas, Wanghua Chen

Open source

DOI: 10.1063/5.0249864
Published: 2025-01-28
Container: Journal of Applied Physics
Publisher: AIP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1063/5.0249864,
  title = {Chemical transport-based growth of Si and SiGe nanowires},
  author = {Ke Yang and Xianjun Zhu and Ruiling Gong and Ileana Florea and Pere Roca i Cabarrocas and Wanghua Chen},
  year = {2025},
  journal = {Journal of Applied Physics},
  doi = {10.1063/5.0249864},
  url = {https://doi.org/10.1063/5.0249864}
}

RIS

TY  - JOUR
TI  - Chemical transport-based growth of Si and SiGe nanowires
AU  - Ke Yang
AU  - Xianjun Zhu
AU  - Ruiling Gong
AU  - Ileana Florea
AU  - Pere Roca i Cabarrocas
AU  - Wanghua Chen
PY  - 2025
JO  - Journal of Applied Physics
DO  - 10.1063/5.0249864
UR  - https://doi.org/10.1063/5.0249864
ER  -

APA

Yang, K., Zhu, X., Gong, R., Florea, I., Cabarrocas, P. R. I., & Chen, W. (2025). Chemical transport-based growth of Si and SiGe nanowires. Journal of Applied Physics. https://doi.org/10.1063/5.0249864

Source records

crossref · retrieved 2026-09-25T10:23:13.310Z