Proton irradiation induced defect analysis in wide-bandgap semiconductors: Optical and structural characterization of SiC and diamond for potential Cherenkov radiators
- DOI
- 10.1063/5.0295486
- Published
- 2025-10-01
- Container
- AIP Advances
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/5.0295486,
title = {Proton irradiation induced defect analysis in wide-bandgap semiconductors: Optical and structural characterization of SiC and diamond for potential Cherenkov radiators},
author = {Yamina Bennour and Mohamed-Ramzi Ammar and Jacques Botsoa and Nicole Doumit and Paul Guèye and Esidor Ntsoenzok},
year = {2025},
journal = {AIP Advances},
doi = {10.1063/5.0295486},
url = {https://doi.org/10.1063/5.0295486}
}RIS
TY - JOUR TI - Proton irradiation induced defect analysis in wide-bandgap semiconductors: Optical and structural characterization of SiC and diamond for potential Cherenkov radiators AU - Yamina Bennour AU - Mohamed-Ramzi Ammar AU - Jacques Botsoa AU - Nicole Doumit AU - Paul Guèye AU - Esidor Ntsoenzok PY - 2025 JO - AIP Advances DO - 10.1063/5.0295486 UR - https://doi.org/10.1063/5.0295486 ER -
APA
Bennour, Y., Ammar, M., Botsoa, J., Doumit, N., Guèye, P., & Ntsoenzok, E. (2025). Proton irradiation induced defect analysis in wide-bandgap semiconductors: Optical and structural characterization of SiC and diamond for potential Cherenkov radiators. AIP Advances. https://doi.org/10.1063/5.0295486
Source records
- crossref · retrieved 2026-09-26T18:47:59.301Z