Excitation-dependent photoluminescence and photoreflectance in InGaAs/GaAs quantum dot bilayers: Comparison of undoped and n-doped configurations
- DOI
- 10.1063/5.0345760
- Published
- 2026-09-01
- Container
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1063/5.0345760,
title = {Excitation-dependent photoluminescence and photoreflectance in InGaAs/GaAs quantum dot bilayers: Comparison of undoped and n-doped configurations},
author = {Arianna Creti and Luca Seravalli and Giovanni Montagna and Lucia Nasi and Giovanna Trevisi and Paola Frigeri and Mauro Lomascolo},
year = {2026},
journal = {Journal of Applied Physics},
doi = {10.1063/5.0345760},
url = {https://doi.org/10.1063/5.0345760}
}RIS
TY - JOUR TI - Excitation-dependent photoluminescence and photoreflectance in InGaAs/GaAs quantum dot bilayers: Comparison of undoped and n-doped configurations AU - Arianna Creti AU - Luca Seravalli AU - Giovanni Montagna AU - Lucia Nasi AU - Giovanna Trevisi AU - Paola Frigeri AU - Mauro Lomascolo PY - 2026 JO - Journal of Applied Physics DO - 10.1063/5.0345760 UR - https://doi.org/10.1063/5.0345760 ER -
APA
Creti, A., Seravalli, L., Montagna, G., Nasi, L., Trevisi, G., Frigeri, P., & Lomascolo, M. (2026). Excitation-dependent photoluminescence and photoreflectance in InGaAs/GaAs quantum dot bilayers: Comparison of undoped and n-doped configurations. Journal of Applied Physics. https://doi.org/10.1063/5.0345760
Source records
- crossref · retrieved 2026-11-10T07:21:44.340Z