Properties of epitaxial, (001)- and (110)-oriented (PbMg(1/3)Nb(2/3)O(3))(2/3)-(PbTiO(3))(1/3) films on silicon described by polarization rotation.
- DOI
- 10.1080/14686996.2016.1140306
- Published
- 2016
- Container
- Science and technology of advanced materials
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1080/14686996.2016.1140306,
title = {Properties of epitaxial, (001)- and (110)-oriented (PbMg(1/3)Nb(2/3)O(3))(2/3)-(PbTiO(3))(1/3) films on silicon described by polarization rotation.},
author = {Boota M and Houwman EP and Dekkers M and Nguyen MD and Vergeer KH and Lanzara G and Koster G and Rijnders G},
year = {2016},
journal = {Science and technology of advanced materials},
doi = {10.1080/14686996.2016.1140306},
url = {https://doi.org/10.1080/14686996.2016.1140306}
}RIS
TY - JOUR TI - Properties of epitaxial, (001)- and (110)-oriented (PbMg(1/3)Nb(2/3)O(3))(2/3)-(PbTiO(3))(1/3) films on silicon described by polarization rotation. AU - Boota M AU - Houwman EP AU - Dekkers M AU - Nguyen MD AU - Vergeer KH AU - Lanzara G AU - Koster G AU - Rijnders G PY - 2016 JO - Science and technology of advanced materials DO - 10.1080/14686996.2016.1140306 UR - https://doi.org/10.1080/14686996.2016.1140306 ER -
APA
M, B., EP, H., M, D., MD, N., KH, V., G, L., G, K., & G, R. (2016). Properties of epitaxial, (001)- and (110)-oriented (PbMg(1/3)Nb(2/3)O(3))(2/3)-(PbTiO(3))(1/3) films on silicon described by polarization rotation.. Science and technology of advanced materials. https://doi.org/10.1080/14686996.2016.1140306
Source records
- pubmed · retrieved 2026-09-26T04:17:39.496Z