Formation of near-vertical trenches and fins with flat {-201} sidewalls on (512) β-Ga(2)O(3) via TMAH wet etching.

Oshima T

Open source

DOI: 10.1080/14686996.2026.2726186
Published: 2026
Container: Science and technology of advanced materials
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1080/14686996.2026.2726186,
  title = {Formation of near-vertical trenches and fins with flat \{-201\} sidewalls on (512) β-Ga(2)O(3) via TMAH wet etching.},
  author = {Oshima T},
  year = {2026},
  journal = {Science and technology of advanced materials},
  doi = {10.1080/14686996.2026.2726186},
  url = {https://doi.org/10.1080/14686996.2026.2726186}
}

RIS

TY  - JOUR
TI  - Formation of near-vertical trenches and fins with flat {-201} sidewalls on (512) β-Ga(2)O(3) via TMAH wet etching.
AU  - Oshima T
PY  - 2026
JO  - Science and technology of advanced materials
DO  - 10.1080/14686996.2026.2726186
UR  - https://doi.org/10.1080/14686996.2026.2726186
ER  -

APA

T, O. (2026). Formation of near-vertical trenches and fins with flat {-201} sidewalls on (512) β-Ga(2)O(3) via TMAH wet etching.. Science and technology of advanced materials. https://doi.org/10.1080/14686996.2026.2726186

Source records

pubmed · retrieved 2026-09-26T06:03:59.950Z
europe-pmc · retrieved 2026-09-26T06:03:59.969Z
doaj · retrieved 2026-09-26T06:03:59.954Z