Scanning electron and polarization microscopy study of the variability and character of hollow macro-defects in silicon carbide wafers

V. Presser, A. Loges, K.G. Nickel

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DOI: 10.1080/14786430802243865
Published: 2008-04-11
Container: Philosophical Magazine
Publisher: Informa UK Limited
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1080/14786430802243865,
  title = {Scanning electron and polarization microscopy study of the variability and character of hollow macro-defects in silicon carbide wafers},
  author = {V. Presser and A. Loges and K.G. Nickel},
  year = {2008},
  journal = {Philosophical Magazine},
  doi = {10.1080/14786430802243865},
  url = {https://doi.org/10.1080/14786430802243865}
}

RIS

TY  - JOUR
TI  - Scanning electron and polarization microscopy study of the variability and character of hollow macro-defects in silicon carbide wafers
AU  - V. Presser
AU  - A. Loges
AU  - K.G. Nickel
PY  - 2008
JO  - Philosophical Magazine
DO  - 10.1080/14786430802243865
UR  - https://doi.org/10.1080/14786430802243865
ER  -

APA

Presser, V., Loges, A., & Nickel, K. (2008). Scanning electron and polarization microscopy study of the variability and character of hollow macro-defects in silicon carbide wafers. Philosophical Magazine. https://doi.org/10.1080/14786430802243865

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crossref · retrieved 2026-11-10T06:12:26.872Z