Advances in ultrashallow doping of silicon

Chufan Zhang, Shannan Chang, Yaping Dan

Open source

DOI
10.1080/23746149.2020.1871407
Published
2021-01-01
Container
Advances in Physics: X
Publisher
Informa UK Limited
Open access
unknown

Credibility signals

uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1080/23746149.2020.1871407,
  title = {Advances in ultrashallow doping of silicon},
  author = {Chufan Zhang and Shannan Chang and Yaping Dan},
  year = {2021},
  journal = {Advances in Physics: X},
  doi = {10.1080/23746149.2020.1871407},
  url = {https://doi.org/10.1080/23746149.2020.1871407}
}

RIS

TY  - JOUR
TI  - Advances in ultrashallow doping of silicon
AU  - Chufan Zhang
AU  - Shannan Chang
AU  - Yaping Dan
PY  - 2021
JO  - Advances in Physics: X
DO  - 10.1080/23746149.2020.1871407
UR  - https://doi.org/10.1080/23746149.2020.1871407
ER  - 

APA

Zhang, C., Chang, S., & Dan, Y. (2021). Advances in ultrashallow doping of silicon. Advances in Physics: X. https://doi.org/10.1080/23746149.2020.1871407

Source records