Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

E L Pankratov

DOI: 10.1088/0022-3727/41/11/115105
Published: 2008-05-16
Container: Journal of Physics D: Applied Physics
Publisher: IOP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1088/0022-3727/41/11/115105,
  title = {Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier},
  author = {E L Pankratov},
  year = {2008},
  journal = {Journal of Physics D: Applied Physics},
  doi = {10.1088/0022-3727/41/11/115105},
  url = {https://doi.org/10.1088/0022-3727/41/11/115105}
}

RIS

TY  - JOUR
TI  - Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier
AU  - E L Pankratov
PY  - 2008
JO  - Journal of Physics D: Applied Physics
DO  - 10.1088/0022-3727/41/11/115105
UR  - https://doi.org/10.1088/0022-3727/41/11/115105
ER  -

APA

Pankratov, E. L. (2008). Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier. Journal of Physics D: Applied Physics. https://doi.org/10.1088/0022-3727/41/11/115105

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crossref · retrieved 2026-11-10T18:49:50.614Z