Nanoscale transport properties at silicon carbide interfaces

F Roccaforte, F Giannazzo, V Raineri

DOI: 10.1088/0022-3727/43/22/223001
Published: 2010-06-09
Container: Journal of Physics D: Applied Physics
Publisher: Not recorded
Open access: yes

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limited evidence Score 45/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

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Cite this work

BibTeX

@article{allodium:10.1088/0022-3727/43/22/223001,
  title = {Nanoscale transport properties at silicon carbide interfaces},
  author = {F Roccaforte and F Giannazzo and V Raineri},
  year = {2010},
  journal = {Journal of Physics D: Applied Physics},
  doi = {10.1088/0022-3727/43/22/223001},
  url = {https://doi.org/10.1088/0022-3727/43/22/223001}
}

RIS

TY  - JOUR
TI  - Nanoscale transport properties at silicon carbide interfaces
AU  - F Roccaforte
AU  - F Giannazzo
AU  - V Raineri
PY  - 2010
JO  - Journal of Physics D: Applied Physics
DO  - 10.1088/0022-3727/43/22/223001
UR  - https://doi.org/10.1088/0022-3727/43/22/223001
ER  -

APA

Roccaforte, F., Giannazzo, F., & Raineri, V. (2010). Nanoscale transport properties at silicon carbide interfaces. Journal of Physics D: Applied Physics. https://doi.org/10.1088/0022-3727/43/22/223001

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hal · retrieved 2026-09-26T10:40:58.522Z