GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer
- DOI
- 10.1088/0022-3727/43/6/065402
- Published
- 2010-01-26
- Container
- Journal of Physics D: Applied Physics
- Publisher
- IOP Publishing
- Open access
- unknown
Credibility signals
uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
Show all credibility signals
- supportingDOI registered: A matching record was returned by Crossref.
- supportingDOI resolves: A matching record was returned by Crossref.
- not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility.
- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
- not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made.
- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredOpen access status: Not checked or no result supplied; no credibility inference made.
- not scoredPublication license: Not checked or no result supplied; no credibility inference made.
- not scoredPublication version: A publication version was supplied but is not scored.
- supportingMetadata completeness: All 6 scored descriptive metadata groups are present.
Cite this work
BibTeX
@article{allodium:10.1088/0022-3727/43/6/065402,
title = {GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer},
author = {M Ahmad Kamarudin and M Hayne and Q D Zhuang and O Kolosov and T Nuytten and V V Moshchalkov and F Dinelli},
year = {2010},
journal = {Journal of Physics D: Applied Physics},
doi = {10.1088/0022-3727/43/6/065402},
url = {https://doi.org/10.1088/0022-3727/43/6/065402}
}RIS
TY - JOUR TI - GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer AU - M Ahmad Kamarudin AU - M Hayne AU - Q D Zhuang AU - O Kolosov AU - T Nuytten AU - V V Moshchalkov AU - F Dinelli PY - 2010 JO - Journal of Physics D: Applied Physics DO - 10.1088/0022-3727/43/6/065402 UR - https://doi.org/10.1088/0022-3727/43/6/065402 ER -
APA
Kamarudin, M. A., Hayne, M., Zhuang, Q. D., Kolosov, O., Nuytten, T., Moshchalkov, V. V., & Dinelli, F. (2010). GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer. Journal of Physics D: Applied Physics. https://doi.org/10.1088/0022-3727/43/6/065402
Source records
- crossref · retrieved 2026-09-26T01:34:29.870Z