Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs

S Rabbaa, J Stiens

DOI: 10.1088/0022-3727/44/32/325103
Published: 2011-08-17
Container: Journal of Physics D: Applied Physics
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1088/0022-3727/44/32/325103,
  title = {Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs},
  author = {S Rabbaa and J Stiens},
  year = {2011},
  journal = {Journal of Physics D: Applied Physics},
  doi = {10.1088/0022-3727/44/32/325103},
  url = {https://doi.org/10.1088/0022-3727/44/32/325103}
}

RIS

TY  - JOUR
TI  - Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs
AU  - S Rabbaa
AU  - J Stiens
PY  - 2011
JO  - Journal of Physics D: Applied Physics
DO  - 10.1088/0022-3727/44/32/325103
UR  - https://doi.org/10.1088/0022-3727/44/32/325103
ER  -

APA

Rabbaa, S., & Stiens, J. (2011). Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs. Journal of Physics D: Applied Physics. https://doi.org/10.1088/0022-3727/44/32/325103

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hal · retrieved 2026-09-26T05:12:31.075Z