Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances
- DOI
- 10.1088/0268-1242/17/7/315
- Published
- 2002-06-18
- Container
- Semiconductor Science and Technology
- Publisher
- IOP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1088/0268-1242/17/7/315,
title = {Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances},
author = {Jin He and Xuemei Xi and Mansun Chan and Chenming Hu and Yingxue Li and Zhang Xing and Ru Huang},
year = {2002},
journal = {Semiconductor Science and Technology},
doi = {10.1088/0268-1242/17/7/315},
url = {https://doi.org/10.1088/0268-1242/17/7/315}
}RIS
TY - JOUR TI - Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances AU - Jin He AU - Xuemei Xi AU - Mansun Chan AU - Chenming Hu AU - Yingxue Li AU - Zhang Xing AU - Ru Huang PY - 2002 JO - Semiconductor Science and Technology DO - 10.1088/0268-1242/17/7/315 UR - https://doi.org/10.1088/0268-1242/17/7/315 ER -
APA
He, J., Xi, X., Chan, M., Hu, C., Li, Y., Xing, Z., & Huang, R. (2002). Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances. Semiconductor Science and Technology. https://doi.org/10.1088/0268-1242/17/7/315
Source records
- crossref · retrieved 2026-11-10T16:54:16.299Z