Metal-Ga<sub>0.47</sub>In<sub>0.53</sub>As contacts with GaAs assist layers
- DOI
- 10.1088/0268-1242/7/4/032
- Published
- 1992-04-01
- Container
- Semiconductor Science and Technology
- Publisher
- IOP Publishing
- Open access
- unknown
Credibility signals
uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
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Cite this work
BibTeX
@article{allodium:10.1088/0268-1242/7/4/032,
title = {Metal-Ga<sub>0.47</sub>In<sub>0.53</sub>As contacts with GaAs assist layers},
author = {L Malacky and G Zwinge and A Schlachetzki},
year = {1992},
journal = {Semiconductor Science and Technology},
doi = {10.1088/0268-1242/7/4/032},
url = {https://doi.org/10.1088/0268-1242/7/4/032}
}RIS
TY - JOUR TI - Metal-Ga<sub>0.47</sub>In<sub>0.53</sub>As contacts with GaAs assist layers AU - L Malacky AU - G Zwinge AU - A Schlachetzki PY - 1992 JO - Semiconductor Science and Technology DO - 10.1088/0268-1242/7/4/032 UR - https://doi.org/10.1088/0268-1242/7/4/032 ER -
APA
Malacky, L., Zwinge, G., & Schlachetzki, A. (1992). Metal-Ga<sub>0.47</sub>In<sub>0.53</sub>As contacts with GaAs assist layers. Semiconductor Science and Technology. https://doi.org/10.1088/0268-1242/7/4/032
Source records
- crossref · retrieved 2026-09-27T08:41:46.537Z