Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface.
- DOI
- 10.1088/0953-8984/25/35/355007
- Published
- 2013 Sep 4
- Container
- Journal of physics. Condensed matter : an Institute of Physics journal
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1088/0953-8984/25/35/355007,
title = {Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface.},
author = {Kitajima M and Narushima T and Kurashina T and Itakura AN and Takami S and Yamada A and Teraishi K and Miyamoto A},
year = {2013},
journal = {Journal of physics. Condensed matter : an Institute of Physics journal},
doi = {10.1088/0953-8984/25/35/355007},
url = {https://doi.org/10.1088/0953-8984/25/35/355007}
}RIS
TY - JOUR TI - Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface. AU - Kitajima M AU - Narushima T AU - Kurashina T AU - Itakura AN AU - Takami S AU - Yamada A AU - Teraishi K AU - Miyamoto A PY - 2013 JO - Journal of physics. Condensed matter : an Institute of Physics journal DO - 10.1088/0953-8984/25/35/355007 UR - https://doi.org/10.1088/0953-8984/25/35/355007 ER -
APA
M, K., T, N., T, K., AN, I., S, T., A, Y., K, T., & A, M. (2013). Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface.. Journal of physics. Condensed matter : an Institute of Physics journal. https://doi.org/10.1088/0953-8984/25/35/355007
Source records
- pubmed · retrieved 2026-09-26T01:32:07.813Z