Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface.

Kitajima M, Narushima T, Kurashina T, Itakura AN, Takami S, Yamada A, Teraishi K, Miyamoto A

Open source

DOI
10.1088/0953-8984/25/35/355007
Published
2013 Sep 4
Container
Journal of physics. Condensed matter : an Institute of Physics journal
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1088/0953-8984/25/35/355007,
  title = {Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface.},
  author = {Kitajima M and Narushima T and Kurashina T and Itakura AN and Takami S and Yamada A and Teraishi K and Miyamoto A},
  year = {2013},
  journal = {Journal of physics. Condensed matter : an Institute of Physics journal},
  doi = {10.1088/0953-8984/25/35/355007},
  url = {https://doi.org/10.1088/0953-8984/25/35/355007}
}

RIS

TY  - JOUR
TI  - Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface.
AU  - Kitajima M
AU  - Narushima T
AU  - Kurashina T
AU  - Itakura AN
AU  - Takami S
AU  - Yamada A
AU  - Teraishi K
AU  - Miyamoto A
PY  - 2013
JO  - Journal of physics. Condensed matter : an Institute of Physics journal
DO  - 10.1088/0953-8984/25/35/355007
UR  - https://doi.org/10.1088/0953-8984/25/35/355007
ER  - 

APA

M, K., T, N., T, K., AN, I., S, T., A, Y., K, T., & A, M. (2013). Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface.. Journal of physics. Condensed matter : an Institute of Physics journal. https://doi.org/10.1088/0953-8984/25/35/355007

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